RF, Microwave, and Millimeter Wave Products - Analog …

Linear and Power Amplifiers 26 ADPA7004: 40 GHz to 80 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier 29 ADPA7005: GaAs pHEMT 18 GHz to 44 GHz, >1 W MMIC Power Amplifier 29 GaN Power Amplifiers 29 ADPA1105: 46 dBm (40 W), 0.9 GHz to 1.6 GHz, GaN Power Amplifier 30 Active Bias Controllers 30 Limiting Amplifiers 30 Variable Gain Amplifiers 31

  Product, Power, Analog, Waves, Amplifier, Microwave, Millimeter, Power amplifier, Cmmi, Gaas, Phemt, Mmic power amplifier, And millimeter wave products, Gaas phemt

0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Data ...

arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology. This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power.

  Devices, Power, Analog devices, Analog, Amplifier, Cmmi, Gaas, Phemt

SMD-codes databook 2012 edition - Turuta

PHEMT Pseudomorphic high electron mobility transistors PIN-diode PIN-diode ... GaAs Gallium arsenide GP General Purpose Applications HF High Frequency Hi-sp High-speed HSST High-Speed Soft-Start ... PA Power Amplifier PAD Pico-Amper Diode PCA …

  Power, Readiness, Amplifier, Power amplifier, Gaas, Gallium, Phemt, Gaas gallium arsenide

SMD-codes databook 2019 edition - Turuta

SMD code Type Function Short description Case St Atr Ad Pin Mnf 5.0 BZX584C5V6-V-G Z-diode 5.2..6.0V, Izt=5mA, Zzt=40Ω, 200mW SOD-523 1a A17 - 6d Vs.1 BZX584C22-V-G Z-diode 20.8..23.3V, Izt=5mA, Zzt=55Ω, 200mW SOD-523 1a A58 - 6d Vs.1 BZX584C16-V-G Z-diode 15.3..17.1V, Izt=5mA, Zzt=40Ω, 200mW SOD-523 1a A56 - 6d Vs.1 BZX584C6V2-V-G Z-diode …