Example: bachelor of science
Ieee 2011
Found 2 free book(s)Advanced FinFET Process Technology
www.ieee-jp.orgAIST, IEEE EDL 2010 Main Cause Dimension variation sources are negligible Main cause of the V ... SOI Conf, 2011, 7.1. 23 LSTP15nm LSTP22nm Obtained Avt meets 22-nm-node SRAM requirement For 15nm and beyond, Avt should be further reduced . National Institute of Advanced Industrial Science and Technology 1. Introduction
Lecture 12: DRAM Basics
my.eng.utah.edu•Two papers in 2010: Udipi et al., ISCA’10, Cooper-Balis and Jacob, IEEE Micro •Additional logic per array so that only relevant bitlines are read out •Essentially results in finer-grain partitioning of the DRAM arrays