2N4401 General Purpose Transistors
Semiconductor Components Industries, LLC, 2010February, 2010 Rev. 41Publication Order Number: 2N4401 /D2N4401General PurposeTransistorsNPN SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSRatingSymbolValueUnitCollector Emitter VoltageVCEO40VdcCollector Base VoltageVCBO60VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSCharacteristicSymbolMaxUn itThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
10 mA 100 mA 10 20 30 500 mA 0.3 0.5 0.7 1.0 3.0 0.1 h , NORMALIZED CURRENT GAIN 0.2 0.3 0.5 2.0 3.0 10 50 70 0.2 0.7 1.0 5.0 7.0 20 30 100 500 FE TJ = 125°C-55°C 2.0 200 300 25°C VCE = 1.0 V VCE = 10 V Figure 17. “On” Voltages IC, COLLECTOR CURRENT (mA) 0.4 0.6 0.8 1.0 0.2 Figure 18. Temperature Coefficients IC, COLLECTOR CURRENT (mA ...
Download 2N4401 General Purpose Transistors
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: