Basic PECVD Plasma Processes (SiH based)

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highly corrosive, please read safety datasheet and safe system of work before use. BHF rate of SiN 0 nm/ min 200 nm/ min 400 nm/ min 600 nm/ min 800 nm/ min 1000 nm/ min 1200 nm/ min 1400 nm/ min 1600 nm/ min 0 °C 200 °C 400 °C 600 °C 800 °C Low rate dep High rate dep Thermal oxide BHF rate of SiO2 0 nm/ min 100 nm/ min 200 nm/ min 300 nm ...

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