細膜 氮化鎵功率元件簡介 - edma.org.tw
Overview of GaN Based Power Device . . . (Gallium nitride). . 1950 (Sili- . con) (Germanium) PN . (Thyristor) . . 1960 . BJT 1970 MOSFET 1980 . IGBT . . Watt Megawatt (EC, Critical electric field) . Hz MHz . . [1] . . . . . . . . . . . . 30 20 1 2014 6 . . (Eg, Bandgap) it)[3] . [2] . (Gallium arsenide) . EC = 105 ( Eg ) . . (Silicon carbide) . . . . . junction leakage . current (Dislocation density) 0/cm2 . (Electron saturation velocity) HVPE . 105/cm2 . Na-flux . JFOM(Johnson s Figure of Merit) 103/cm2 . BFOM(Baliga s Figure of Mer- . FOM . 20 1 2014 6 31. . taneous polarization).
細膜 32 . ê ¤ H / 20á Ð1 2014P6a Þ Ð 且成本為矽晶圓的百倍以上，尚未具有 商業價值，因此目前較受歡迎的氮化鎵
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