GaN Power HEMT Tutorial: GaN Basics
GANPOWERINTERNATIONAL INC Fred Yue Fu ( ),GaNPower International Yue Fu Co-founderand COOGaNPower International Power HEMT Tutorial: GaN Basics12 Fred Yue Fu ( ), GaNPower International Session 1: GaN devices Basics GaN, An Introduction GaN Design, Fabrication and Testing GaN Compact Modeling and Reliability Session 2: Gate Driving Session 3: GaN Applications3 Fred Yue Fu ( ), GaNPower International 1960s1970s1980s20002010Power Diode GermaniumThyristorSiliconPower BipolarSiliconPower MOSFET SiliconIGBTSiliconSchottky diodeSilicon CarbidePower HEMTGaNPower Devices: History of Evolvements4 Fred Yue Fu ( ), GaNPower International s time to move +substraten-drift regionp+ body contactpolysilicon gatesource contactn+ sourcep-well5 Fred Yue Fu ( ), GaNPower International Properties ComparisonMaterialPropertySiliconSiC-4HG aNBand-gap(eV) (1E+6V/cm) (cm2/V-Sec.)14509002000ElectronSaturatio nVelocity(1E+6cm/Sec.)102225ThermalCondu ctivity(W/cm2K) (FOM)= " E%&167530006 Fred Yue Fu ( ), GaNPower International Power Devices: ApplicationsGaN HEMT Silicon Super Junction MOSFET EncroachingSiC MOSFETSilicon IGBTEncroachingSource: YoleDevelopment: How Power electronics will reshape to meet 21st century challenges?
Off-stateleakage high high low low Reliabilityandyield low low low high LateralorVerticaldevice lateral lateral lateral lateral or ... Rated Voltage 650V 700V 650V 600V ... SG D AlN 2DEG Electron conc. @ Equilibrium (0V on all Terminals) 2DEG Electron conc.
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