ProblemsandSolutionsto PhysicsofSemiconductorDevices

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Problems and Solutions toPhysics of Semiconductor Lavrov Contents1 Properties of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Idealp-nJunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nonidealp-nJunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bipolar Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MIS/MOS Capacitor and MOSFET . . . . . . . . . . . . . . . . . . . . . Low-dimensional Structures.

5. Find current densities jat room temperature for a Schottky diode Pt-n-GaAs at n = 8800 cm2 V−1 s−1, m n/m 0 = 0.063, work function of Pt is 5.65 eV, χ GaAs = 4.07 eV, Nc = 8.63 × 1013 × T3/2 cm−3. Apply thermionic-emission theory. 6. The capacitance of a Au-n-GaAs Schottky diode is given by the relation 1/C2 =

  Schottky