銅線封裝技術 - sanlien.com

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65. . . . 1. TANAKA . . (1) TPCW( Cu). . TANAKA Pure Copper Wire . . . . . . . (2) TOCW( Cu). . . TANAKA Oxide-free Copper Wire . . . . . . 1. . 30%~90% . 2. 25 . ( ) ( ) ( ) ( ). unit: cm . 3. - - . . 4. . Items Unit Copper Gold Aluminum . Chemical Symbol Cu Au Al Atomic Number 29 79 13. Atomic Mass Crystal Structure fcc fcc fcc Lattice Constant Melting Point 1083 1064 660. Boiling Point 2855 2983 2520. Density g/cm3 Specific Resistance U cm Heat Conductivity W/m K 397 293 238 . Wire Expansion Rate 10-6/K Young's Modulus 1010/N/m2 / / . . 65. 2. FAB . Breaking Load Elongation 1. . Diameter (gf) (%). ( m) (1) . TPCW TOCW TPCW TOCW. . 20 4-9 6-9 5-15 5%UP FAB(Free Air Ball) . 23 6-12 8-12 6-18 5%UP . 25 7-14 10-14 6-18 6%UP . 1000 . 30 11-20 14-20 8-20 7%UP black oxide(II) 2Cu+O2 2CuO.

65 前言 半導體封裝技術在台灣發展已經相當成熟， 不論是硬體設備或相關材料發展與研究，均有一 定的水準。在目前講求 ...