晶圓的處理－薄膜 - web.cjcu.edu.tw
Oxidation . . . chemical vapor deposition . CVD . . Si + O2 -> SiO2. Si + 2H2O -> SiO2 + 2H2. . . . . CVD. CVD . SiH4 -> Si . +. 2H2. SiH4 + O2 -> SiO2 +. 2H2. 3SiH4 + 4NH3 -> Si3N4 . + 12H2. 2PH3 + 4O2 ->P2O5 PSG . + 3H2O. CVD . APCVD CVD . atmospheric pressure CVD . LPCVD CVD low press re CVD . pressure PECVD CVD . plasma enhanced CVD . p . APCVD. . . . . . . step coverage . . . LPCVD. . . APCVD . . . . . . . . . . . . . back fill . fill . SiH4 LPCVD . . CVD . . PECVD. radio . frequency RF . q y . . . radical . . . . sputtering . Planar Magnetron Sputtering . evaporation . diffusion . . . . . ion i l ti . implanation . . . . . reflow . . . . anneal . . . RTA Rapid Thermal Anneal.
氧化（oxidation） • 熱氧化法 •薄膜堆積法：使用化學蒸氣沉 積（chemical vapor deposition， CVD）
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