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1. Carrier Concentration

1. Carrier Concentration a) intrinsic Semiconductors - Pure single-crystal material For an intrinsic semiconductor, the Concentration of electrons in the conduction band is equal to the Concentration of holes in the valence band. We may denote, ni : intrinsic electron Concentration pi : intrinsic hole Concentration However, ni = pi Simply, ni : intrinsic Carrier Concentration , which refers to either the intrinsic electron or hole Concentration Commonly accepted values of ni at T = 300 K Silicon x 1010 cm-3 Gallium arsenide x 106 cm-3 Germanium x 1013 cm-3 b) extrinsic Semiconductors - Doped material The doping process can greatly alter the electrical characteristics of the semiconductor.

i: intrinsic electron concentration p i: intrinsic hole concentration However, n i = p i Simply, n i:intrinsic carrier concentration, which refers to either the intrinsic electron or hole concentration Commonly accepted values of n i at T = 300°K Silicon 1.5 x 1010 cm-3 Gallium arsenide 1.8 x 106 cm-3 Germanium 2.4 x 1013 cm-3 b) Extrinsic ...

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  Carrier, Concentrations, Intrinsic, Extrinsic, Intrinsic carrier concentration, Carrier concentration

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