1.EMITTER 2. BASE 3. COLLECT

NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25 C unless otherwise noted) SymbolParameterValue UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous A PC Collector Power Dissipation W TJ Junction Temperature 150 C Tstg Storage Temperature -55-150 C ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAXUNIT Collector-base breakdown voltage V(BR)CBO IC=10 A, IE=060 VCollector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=040 VEmitter-base breakdown voltage V(BR)EBO IE= 10 A, IC=06 VCollector cut-off current ICBO VCB=60V, IE=0 A Collector cut-off current ICEO VCE= 40V, IB=0 A Emitter cut-off current IEBO VEB= 5V, IC=0 A hFE1 VCE=1V, IC=10mA100 400hFE2 VCE=1V, IC=50mA60DC current gain hFE3 VCE=1V, IC=100mA30 Collector-emitter saturation voltage V

NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (T A=25℃ unless otherwise noted) SymbolParameterValue Units V CBO Collector-Base Voltage …

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  Silicon npn epitaxial, Silicon, Epitaxial, Transistor

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