Transcription of 1. Noise sources in MOSFET transistors. - Nikhef
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1. Noise sources in MOSFET transistors. - Nikhef
Noise sources in a MOSFET transistor , 25-01-99, JDSNIKHEF, Noise sources in MOSFET Noise sources in a MOS transistor are:thermal Noise in the channel,1/f Noise , Noise in the resistive poly gate, Noise due to the distributed substrate resistance,shotnoise associated with the leakage current of the drain source normal use, only the first two items are important. The other Noise sourcesmust be taken into account for very low Noise Channel thermal MOSFET has in normal working order an inverse resistive channelbetween the drain and the source. The gate voltage forms with minoritycarriers the channel. In the extreme case when the drain source voltage0=DSV, the channel can be treated as a homogeneous resistor. The Noise inthe channel is:024gTkid =Equation constant,TAbsolute temperatureg0channel conductance at zero drain-source however the voltage 0 DSV. The GSV is higher as the the channel is more conductive nearby the source, compared to thedrain.
The factor g is a complex function of the basic transistor parameters and bias conditions. To give g a value a numerical approach is required. For modern CMOS processes with oxide thickness tox in the order of 50 nm and with a lower substrate doping N b of about 10 15 - 10 16 cm-3 the factor g is between 0.67 and 1.
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