Transcription of 100V N-Channel MOSFET
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100V N-Channel MOSFET
AOD2916. 100V N-Channel MOSFET . General Description Product Summary The AOD2916 uses trench MOSFET technology that is VDS 100V. uniquely optimized to provide the most efficient high ID (at VGS=10V) 25A. frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 34m . switching power losses are minimized due to an RDS(ON) (at VGS= ) < . extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested TO252. DPAK. D. Top View Bottom View D. D. G. S G. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V. Gate-Source Voltage VGS 20 V. Continuous Drain TC=25 C 25. ID. Current TC=100 C 18 A. Pulsed Drain Current C IDM 50. Continuous Drain TA=25 C IDSM A. Current TA=70 C C. Avalanche Current IAS 8 A.
AOD2916 100V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 25A R DS(ON) (at V GS =10V) < 34m Ω R DS(ON) (at V GS =4.5V) < 43.5m Ω 100% UIS Tested 100% R g Tested Symbol The AOD2916 uses trench MOSFET technology that is
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