Transcription of 100V N-Channel MOSFET - Alpha and Omega Semiconductor
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100V N-Channel MOSFET - Alpha and Omega Semiconductor
AON7296100V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 66m RDS(ON) (at VGS= )< 90m 100% UIS Tested100% Rg TestedSymbolThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and device is ideal for boost converters and synchronousrectifiers for consumer, telecom, industrial power suppliesand LED Maximum Ratings TA=25 C unless otherwise noted100 VGDSTop View12348 765 DFN 3x3 EPTop View Bottom View Pin 1 SymbolVDSVGSIDMIASEASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A D5756 WPower Dissipation APDSMWTA=70 CTC=25 CPower Dissipation BPDATA=25 CIDSMATA=70 CTC=100 C25 Pulsed Drain Current CContinuous DrainCurrentmJAvalanche Current C4 Continuous energy L= CVMaximumUnitsParameterUnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameterTypMaxV 20 Gate-Source VoltageDrain-Source Voltage100 Maximum Junction-to-Ambient A C/WR JA306040 Rev 0: Sep.
AON7296 100V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 12.5A R DS(ON) (at V GS =10V) < 66m Ω R DS(ON) (at V GS =4.5V) < 90m Ω 100% UIS Tested 100% R g Tested Symbol The AON7296 uses trench MOSFET technology that is
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