Transcription of 2N2222 - Farnell
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2N2222 - Farnell
2N2222 Low Power Bipolar TransistorsPage 106/04/06 : NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. Collector2N2222 Low Power Bipolar TransistorsPage 206/04/06 Maximum Ratings (Ta = 25 C unless specified otherwise)DescriptionSymbol2N2222 UnitCollector Emitter VoltageVCEO30 VCollector Base VoltageVCBO60 Emitter Base VoltageVEBO5 Collector Current ContinuousIC800mAPower Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 COperating and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CElectrical Characteristics (Ta = 25 C unless specified otherwise)
f = 100kHz - 8 pF Input Capacitance Cib VEB = 0.5V, IC = 0 f = 100kHz - 30 Switching Characteristics Delay Time td I C = 150mA,IB1 = 15mA - 10 ns Rise Time tr VCC = 30V, VBE (off) = 0.5V - 25 Storage Time t s IC = 150mA, IB1 = 15mA - 225 Fall Time tf IB2 = 15mA, VCC = 30V - 60 *Pulse Condition: Pulse Width ≤300µs, Duty Cycle ≤2%. Package ...
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