Transcription of 2N2222 - Farnell
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2N2222 Low Power Bipolar TransistorsPage 106/04/06 : NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. Collector2N2222 Low Power Bipolar TransistorsPage 206/04/06 Maximum Ratings (Ta = 25 C unless specified otherwise)DescriptionSymbol2N2222 UnitCollector Emitter VoltageVCEO30 VCollector Base VoltageVCBO60 Emitter Base VoltageVEBO5 Collector Current ContinuousIC800mAPower Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 COperating and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CElectrical Characteristics (Ta = 25 C unless specified otherwise)
Collector Current Continuous IC 800 mA Power Dissipation at Ta = 25°C Derate above 25°C PD 500 2.28 mW mW/°C Power Dissipation at TC = 25°C Derate above 25°C 1.2 6.85 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg-65 to +200 °C Electrical Characteristics (Ta = 25°C unless specified otherwise) Description Symbol Test ...
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