Transcription of 2N2222 - Farnell
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2N2222 - Farnell
2N2222 Low Power Bipolar TransistorsPage 106/04/06 : NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. Collector2N2222 Low Power Bipolar TransistorsPage 206/04/06 Maximum Ratings (Ta = 25 C unless specified otherwise)DescriptionSymbol2N2222 UnitCollector Emitter VoltageVCEO30 VCollector Base VoltageVCBO60 Emitter Base VoltageVEBO5 Collector Current ContinuousIC800mAPower Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 COperating and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CElectrical Characteristics (Ta = 25 C unless specified otherwise)
IC = 500mA, VCE = 10V* 35 50 75 50 100 30 300-Dynamic Characteristics Transition Frequency ft IC = 20mA, VCE = 20V f = 100MHz 250 - MHz Output Capacitance Cob VCB = 10V, IE = 0 f = 100kHz - 8 pF Input Capacitance Cib VEB = 0.5V, IC = 0 f = 100kHz - 30 Switching Characteristics Delay Time td I C = 150mA,IB1 = 15mA - 10 ns Rise Time tr VCC = 30V ...
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