Transcription of 2N2222 - Farnell
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2N2222 - Farnell
2N2222 Low Power Bipolar TransistorsPage 106/04/06 : NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. Collector2N2222 Low Power Bipolar TransistorsPage 206/04/06 Maximum Ratings (Ta = 25 C unless specified otherwise)DescriptionSymbol2N2222 UnitCollector Emitter VoltageVCEO30 VCollector Base VoltageVCBO60 Emitter Base VoltageVEBO5 Collector Current ContinuousIC800mAPower Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 COperating and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CElectrical Characteristics (Ta = 25 C unless specified otherwise)DescriptionSymbolTest ConditionValueUnit MinimumMaximumCollector Emitter Breakdown VoltageBVCEOIC = 10mA, IB = 030-VCollector Base Breakdown VoltageBVCBOIC = 10 A, IE= 060-Emitter Base Breakdown VoltageVEBOfIE = 10 A, IC = 05-Collector Leakage CurrentICBOVCB = 50V, IE = 0 VCB = 50V, IE = 0Ta= 150 C-1010nA ACollector Emitter Saturation Voltage*VCE (Sat)
2N2222 Low Power Bipolar Transistors Page 2 06/04/06 V1.0 Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Description Symbol 2N2222 Unit Collector Emitter Voltage VCEO 30 Collector Base Voltage CBO 60V Emitter Base Voltage VEBO 5 Collector Current Continuous IC 800 mA Power Dissipation at Ta = 25°C Derate above 25°C
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