Transcription of 2N2222 - Farnell element14
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2N2222 - Farnell element14
2N2222 Low Power Bipolar TransistorsPage 106/04/06 : NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. Collector2N2222 Low Power Bipolar TransistorsPage 206/04/06 Maximum Ratings (Ta = 25 C unless specified otherwise)DescriptionSymbol2N2222 UnitCollector Emitter VoltageVCEO30 VCollector Base VoltageVCBO60 Emitter Base VoltageVEBO5 Collector Current ContinuousIC800mAPower Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 COperating and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CElectrical Characteristics (Ta = 25 C unless specified otherwise)DescriptionSymbolTest ConditionValueUnit MinimumMaximumCollector Emitter Breakdown VoltageBVCEOIC = 10mA, IB = 030-VCollector Base Breakdown VoltageBVCBOIC = 10 A, IE= 060-Emitter Base Breakdown VoltageVEBOfIE = 10 A, IC = 05-Collector Leakage CurrentICBOVCB = 50V, IE = 0 VCB = 50V, IE = 0Ta= 150 C-1010nA ACollector Emitter Saturation Voltage*VCE (Sat)IC = 150mA, IB = 15mAIC = 500mA
2N2222 Low Power Bipolar Transistors Page 3 06/04/06 V1.0 Electrical Characteristics (Ta = 25°C unless specified otherwise) Parameter Symbol Test Condition 2N2222 Unit ...
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