Transcription of 2N3019 - Low Power Transistors
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2N3019 - Low Power Transistors
Semiconductor Components Industries, LLC, 2012 August, 2012 Rev. 21 Publication Order Number: 2N3019 /D2N3019, 2N3019S, 2N3700 Low Power TransistorsNPN SiliconFeatures MIL PRF 19500/391 Qualified Available as JAN, JANTX, and JANTXVMAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO80 VdcCollector Base VoltageVCBO140 VdcEmitter Base Current Device Dissipation @ TA = 25 C2N3019, 2N3019S2N3700PT800500mWTotal Device Dissipation @ TC = 25 C2N3019, and Storage JunctionTemperature RangeTJ, Tstg 65 to+200 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to Ambient2N3019, 2N3019S2N3700 RqJA195325 C/WThermal Resistance, Junction to Case2N3019, 2N3019S2N3700 RqJC30150 C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device 5 CASE 205 AASTYLE 12N3019 DevicePackageShippingORDERING INFORMATIONJAN2N3019 JANTX2N3019TO 5 BulkJANTXV2N3019 JAN2N3019 SJANTX2N3019 STO 39 BulkJANTXV2N3019 STO 39 CASE 205 ABSTYLE 12N3019 STO 18 CASE 206 AASTYLE 12N3700 JAN2N3700 JANTX2N3700TO 18 BulkJANTXV2N37002N3019, 2N3019S, 2N3700 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltag
2n3019, 2n3019s, 2n3700 http://onsemi.com 3 package dimensions to−5 3−lead case 205aa issue b style 1: pin 1. emitter 2. base 3. collector seating r plane f b c k l p 3x d
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