Transcription of 2N3019 - Low Power Transistors
{{id}} {{{paragraph}}}
Example: biology
2N3019 - Low Power Transistors
Semiconductor Components Industries, LLC, 2012 August, 2012 Rev. 21 Publication Order Number: 2N3019 /D2N3019, 2N3019S, 2N3700 Low Power TransistorsNPN SiliconFeatures MIL PRF 19500/391 Qualified Available as JAN, JANTX, and JANTXVMAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO80 VdcCollector Base VoltageVCBO140 VdcEmitter Base Current Device Dissipation @ TA = 25 C2N3019, 2N3019S2N3700PT800500mWTotal Device Dissipation @ TC = 25 C2N3019, and Storage JunctionTemperature RangeTJ, Tstg 65 to+200 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to Ambient2N3019, 2N3019S2N3700 RqJA195325 C/WThermal Resistance, Junction to Case2N3019, 2N3019S2N3700 RqJC30150 C/WStresses exceeding Maximum Ratings may damage the device.
2n3019, 2n3019s, 2n3700 http://onsemi.com 3 package dimensions to−5 3−lead case 205aa issue b style 1: pin 1. emitter 2. base 3. collector seating r plane f b c k ...
Loading..
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: