Transcription of 2N3903 - General Purpose Transistors
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2N3903 - General Purpose Transistors
DATA Semiconductor Components Industries, LLC, 2012 August, 2021 Rev. 91 Publication Order Number: 2N3903 /DGeneral PurposeTransistorsNPN Silicon2N3903, 2n3904 Features Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC200mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (Note 1)CharacteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be Indicates Data in addition to JEDEC Requirements.
2N3903, 2N3904 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base …
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