Transcription of 2N3904 MMBT3904 - mit.edu
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2N3904 MMBT3904 - mit.edu
2N3904 / MMBT3904 / PZT39042N3904 MMBT3904 PZT3904 NPN General Purpose AmplifierThis device is designed as a general purpose amplifier and useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier. Sourced from Process Maximum Ratings* TA = 25 C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be :1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle Voltage40 VVCBOC ollector-Base Voltage60 VVEBOE mitter-Base Current - Continuous200mATJ, TstgOperating and Storage Junction Temperature Range-55 to +150 CCBETO-92 BCCSOT-223 ECBESOT-23 Mark: 1A 1997 Fairchild Semiconductor Corporation2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25 C unless otherwise notedSymbolParameterTest ConditionsMinMaxUnitsV(BR)CEOC ollector-Emitter Breakdown VoltageIC = mA, IB = 040VV(BR)CBOC ollector-Base Breakdown VoltageIC = 10 A, IE = 060VV(BR)EBOE mitter-Base Breakdown VoltageIE = 10 A, IC = Cutoff CurrentVCE = 30 V, VEB = 050nAICEXC ollector Cutoff CurrentVCE = 30 V, VEB = 050nAOFF CHARACTERISTICSON CHARACTERISTICS*SMALL SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICS (except MMPQ3904)*Pulse Test: Pulse Width 300 s, Duty Cycle (Is= Xt
2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.
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