Transcription of 2N4401 General Purpose Transistors
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2N4401 General Purpose Transistors
Semiconductor Components Industries, LLC, 2010 February, 2010 Rev. 41 Publication Order Number: 2N4401 /D2N4401 General PurposeTransistorsNPN SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device.
10 mA 100 mA 10 20 30 500 mA 0.3 0.5 0.7 1.0 3.0 0.1 h , NORMALIZED CURRENT GAIN 0.2 0.3 0.5 2.0 3.0 10 50 70 0.2 0.7 1.0 5.0 7.0 20 30 100 500 FE TJ = 125°C-55°C 2.0 200 300 25°C VCE = 1.0 V VCE = 10 V Figure 17. “On” Voltages IC, COLLECTOR CURRENT (mA) 0.4 0.6 0.8 1.0 0.2 Figure 18. Temperature Coefficients IC, COLLECTOR CURRENT (mA ...
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