Transcription of 2N4401 General Purpose Transistors
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2N4401 General Purpose Transistors
Semiconductor Components Industries, LLC, 2010 February, 2010 Rev. 41 Publication Order Number: 2N4401 /D2N4401 General PurposeTransistorsNPN SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance.
IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 6.0 8.0 10 0 4.0 2.0 NF, NOISE FIGURE (dB) Figure 10. Source Resistance Effects RS, SOURCE RESISTANCE (OHMS) f = 1.0 kHz IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA
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