Transcription of 2N7000 - Small Signal MOSFET
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2N7000 - Small Signal MOSFET
Semiconductor Components Industries, LLC, 2011 April, 2011 Rev. 81 Publication Order Number: 2N7000 /D2N7000 GSmall Signal MOSFET200 mAmps, 60 VoltsN Channel TO 92 Features AEC Qualified PPAP Capable This is a Pb Free Device*MAXIMUM RATINGSR atingSymbolValueUnitDrain Source VoltageVDSS60 VdcDrain Gate Voltage (RGS = MW)VDGR60 VdcGate Source Voltage Continuous Non repetitive (tp 50 ms)VGSVGSM 20 40 VdcVpkDrain Current Continuous PulsedIDIDM200500mAdcTotal Power Dissipation @ TC = 25 CDerate above 25 COperating and Storage TemperatureRangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA357 C/WMaximum Lead Temperature forSoldering Purposes, 1/16 from casefor 10 secondsTL300 CStresses exceeding Maximum Ratings may damage the device.
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) VGS VGSM ±20 ...
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