Transcription of 2N7002 - Diodes Incorporated
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2N7002 - Diodes Incorporated
2N7002 Document number: DS11303 Rev. 35 - 2 1 of 5 July 2018 Diodes Incorporated 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR product Summary BVDSS RDS(ON) Max ID Max TA = +25 C 60V @ VGS = 5V 210mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all …
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