“新基建” 之

Globalstar 1998 56 LEO - - Boeing 2016 2956 LEO Q/V - LEOSat 2015 108 LEO Ka - 第二代铱星 2018年已全 部完成 75 MEO - 75颗 波音 2956 MEO V - Kuiper 3236 MEO Ka - Kepler 140 - Ku/Ka 2颗 KLEO 624 MEO Ka 2颗试验星 Viasat 2011-2020已 完成 5 - Ka 5颗 表2 国外低轨卫星星座部 …

  Globalstar

Advanced FinFET Process Technology

National Institute of Advanced Industrial Science and Technology Multi-Gate FinFETs S G D 1st FinFET Patent in 1980 from AIST FinFET Proposed by AIST in 1980 (named “FinFET” by UCB in 1999) Ultrathin and undoped channel and self-aligned double gate

  Finfet

Featuring Pascal GP100, the World’s Fastest GPU - Nvidia

16nm FinFET Enables more features, higher performance, and improved power efficiency Figure 2. New Technologies in Tesla P100 . GP100 Pascal Whitepaper Tesla P100: Revolutionary Performance and Features for GPU Computing NVIDIA Tesla P100 WP-08019-001_v01.1 | 6

  Nvidia, Finfet

NVIDIA TESLA V100 GPU ARCHITECTURE

new TSMC 12 nm FFN (FinFET NVIDIA) high-performance manufacturing process customized for NVIDIA. GV100 delivers considerably more compute performance, and adds many new features compared to the prior Pascal GPU generation. Further simplifying GPU programming and application porting, GV100 also improves GPU resource utilization.

  V001, Finfet

14 nm Process Technology: Opening New Horizons - Intel

>500 million chips using 22 nm Tri-gate (FinFET) transistors shipped to date . Intel Technology Roadmap 6 22 nm . Manufacturing Development . Research . 14 nm 10 nm 7 nm . Industry’s first 14 nm technology is now in volume manufacturing . 1 10 100 1000 10000 0.001 0.01 0.1 1 10 1970 1980 1990 2000 2010 2020 Micron ~0.7x per nm generation.

  Intel, Technology, Process, Opening, Horizons, Process technology, Finfet, Opening new horizons

Company Presentation - STMicroelectronics

FinFET through Foundry eNVM CMOS Optical sensing solutions Packaging technologies Leadframe –Laminate –Sensor module –Wafer level Vertical Intelligent Power Differentiated technologies are our foundation 18 MEMS for sensors & micro-actuators. Our products and solutions enable customer innovation 19

  Stmicroelectronics, Finfet

FinFET 3D Transistor & the Concept Behind It

• FinFET has larger Ion. UTBSOI has a good back-gate bias option. STI. STI. Si. Gate 1. Gate 2. UTBSOI. FinFET. Chenming Hu, August 2011 21. What May Happen • FinFET will be used at 22nm by Intel and later by more firms to <10nm. • Some firms may use UTBSOI to gain market from regular CMOS at 20/18/16nm. ...

  Concept, Transistor, Behind, Finfet, Finfet 3d transistor amp the concept behind it

Technology and Cost Trends at Advanced Nodes

Foundry node scaling challenges • 10nm (12nm standard node) • Short lived half node for TSMC. Longer lived and more variants for Samsung. • Scaling will …