Transcription of 8Gb B-die DDR4 SDRAM - Samsung us
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8Gb B-die DDR4 SDRAM - Samsung us
Rev. , Feb. 2017. K4A8G045WB. K4A8G085WB. 8Gb B-die DDR4 SDRAM . 78 FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet Samsung ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND. SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
• Programmable Additive Latency: 0, CL-2 or CL-1 clock • Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12 (DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400) and 14,18 (DDR4-2666) • 8-bit pre-fetch • Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
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