Transcription of AO3401 Rev6 Rohs-BUP007A
{{id}} {{{paragraph}}}
Example: bankruptcy
AO3401 Rev6 Rohs-BUP007A
AO340130V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V)< 50m RDS(ON) (at VGS = )< 60m RDS(ON) (at VGS= )< 85m SymbolVDSThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as This device is suitable for use asa load switch or in PWM Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOT23 Top View Bottom View DGSGSDGDSVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR CJunction and Storage Temperature Range-55 to 150 C/WR JA7010090 CThermal CharacteristicsUnitsParameterTypVDrain-S ource 12 Gate-Source VoltageTA=25 CTA=70 CPower Dissipation BPDP ulsed Drain Current CContinuous DrainCurrentTA=25 Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient ASOT23 Top View Bottom View DGSGSDGDS Rev 6: Feb.
AO3401 Symbol Min Typ Max Units BV DSS-30 V VDS =-30V, V GS =0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.5 -0.9 -1.3 V ID(ON)-27 A 41 50 TJ=125°C 62 75 47 60 mΩ 60 85 mΩ gFS 17 S VSD-0.7 -1 V IS-2 A ISM-27 A Ciss 645 pF Coss 80 pF Crss 55 pF Rg 4 7.8 12 Ω Qg(10V) 14 nC Qg(4.5V) 7 nC Qgs 1.5 nC Q 2.5 nC Pulsed Body-Diode CurrentB Maximum Body-Diode …
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: