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Application& Introduction* Note&& - hrebsd.com
A Comparison of Strain Measurement in Silicon Using EBSD and Confocal Raman Spectroscopy Stresses in Si as small as 10 MPa have been measured using electron Backscatter Diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of 10nm and 100nm respectively. 1 introduction There are several established techniques that allow the measurement of strain in materials and structures on a macro scale such as X- ray diffraction and neutron diffraction.
AComparison"of"Strain"Measurement"in"Silicon"Using" EBSD"and"Confocal"Raman"Spectroscopy" Stresses&in&Si&as&small&as&10&MPahave&been&measured&using&Electron&
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