Transcription of Applications HEXFET Power MOSFET - Infineon …
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MOSFETHEXFET Power MOSFETB enefitslUltra-Low Gate ImpedancelVery Low RDS(on)lFully Characterized Avalanche Voltage and CurrentVDSSRDS(on) maxID 77A Notes through are on page 10 Absolute Maximum Voltage 20 VVGS Gate-to-Source Voltage 20 VID @ TC = 25 CContinuous Drain Current, VGS @ 10V 77 ID @ TC = 70 CContinuous Drain Current, VGS @ 10V 64 AIDMP ulsed Drain Current 308PD @TC = 25 CMaximum Power Dissipation 87 WPD @TC = 70 CMaximum Power Dissipation 61W Linear Derating Factor mW/ CTJ , TSTGJ unction and Storage Temperature Range-55 to + 175 C * When mounted on 1" square PCB (FR-4 or G-10 Material).
www.irf.com 1 8/22/00 IRF3704 SMPS MOSFET IRF3704S HEXFET® Power MOSFET Benefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
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