Transcription of Atomic Layer Deposition - ALD Academy
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Atomic Layer Deposition - ALD Academy
Atomic Layer Deposition Harm Knoops, Stephen E. Potts, Ageeth A. Bol, and (Erwin) Kessels Eindhoven University of Technology Photo: Area-selective Atomic Layer Deposition research in Eindhoven, the Netherlands. (Photo by Bart van Overbeeke) Please cite this chapter as: Knoops, Potts, Bol, and Kessels, Ch. 27 - Atomic Layer Deposition (pp. 1101 1134) in Handbook of Crystal Growth, edited by T. Kuech (Elsevier, 2015). doi: FOR TEACHING AND SCHOLARLY USE ONLY - DO NOT DISTRIBUTE 1 Abstract Atomic Layer Deposition (ALD), also referred to historically as Atomic Layer epitaxy (ALE), is a vapor-phase Deposition technique for preparing ultrathin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend to miniaturize electronic devices. In addition many other innovative technologies are increasingly benefitting from the high-quality thin films.
3 Published as: H.C.M. Knoops, S.E. Potts, A.A. Bol, and W.M.M. Kessels, Ch. 27 - Atomic Layer Deposition (pp. 1101–1134) in Handbook of Crystal Growth, edited by T. Kuech (Elsevier, 2015). ter level (Low temperature: The ability to deposit high-quality materials with a high purity and a high density (no voids or pinholes) at low substrate temperatures.
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