Atomic Layer Deposition - ALD Academy

Atomic Layer Deposition Harm Knoops, Stephen E. Potts, Ageeth A. Bol, and (Erwin) Kessels Eindhoven University of Technology Photo: Area-selective Atomic Layer Deposition research in Eindhoven, the Netherlands. (Photo by Bart van Overbeeke) Please cite this chapter as: Knoops, Potts, Bol, and Kessels, Ch. 27 - Atomic Layer Deposition (pp. 1101 1134) in Handbook of Crystal Growth, edited by T. Kuech (Elsevier, 2015). doi: FOR TEACHING AND SCHOLARLY USE ONLY - DO NOT DISTRIBUTE 1 Abstract Atomic Layer Deposition (ALD), also referred to historically as Atomic Layer epitaxy (ALE), is a vapor-phase Deposition technique for preparing ultrathin films with precise growth control.

building blocks of modern electronic devices. Since the 45-nm technology node of transistors, thermally grown SiO 2 has become inadequate and high-quality nanome-ter-thick films of materials such as HfO 2 need to be de-posited (Fig. 2a). A thickness control at the subnanome-Fig. 2b), uniformly over 300 mm silicon wafers, is necessary.

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