Axial Lead Rectifiers - ON Semiconductor

DATA Semiconductor Components Industries, LLC, 2006 August, 2021 Rev. 111 Publication Order Number:1N5817/DAxial Lead RectifiersSCHOTTKY BARRIER AMPERE 20, 30 and 40 VOLTS1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large areametal to silicon power diode. State of the art geometry featureschrome barrier metal, epitaxial construction with oxide passivationand metal overlap contact. Ideally suited for use as Rectifiers inlow voltage, high frequency inverters, free wheeling diodes, andpolarity protection Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb Free Devices*Mechanical Characteristics: Case: Epoxy, Molded Weight: Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V)Human Body Model = 3B (>8000 V)*For additional information o

125 115 105 95 85 75 2.0 3.0 4.0 5.0 7.0 10 15 20 T R, REFERENCE TEMPERATURE (° C) VR, DC REVERSE VOLTAGE (VOLTS) Figure 1. Maximum Reference Temperature 1N5817 40 30 23 60 80 RMaximum allowable junction temperature JA (°C/W) = 110 125 115 105

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