BC107/BC108 Series

BC107/BC108 SeriesLow Power Bipolar TransistorsPage 120/04/06 : npn silicon Planar epitaxial Metal Can Dimensions : MillimetresPin Configuration:1. Emitter2. Base3. CollectorGeneral Purpose Amplifier/SwitchesBC107/BC108 SeriesLow Power Bipolar TransistorsPage 220/04/06 Maximum RatingsDescriptionSymbolBC107BC108 UnitCollector-Emitter VoltageVCEO4525 VCollector-Base VoltageVCBO5030 Emitter-Base Current Dissipation at Ta= 25 CDerate above 25 CPower Dissipation at TC = 25 CDerate above 25 and Storage Junction Temperature RangeTJ, Tstg-65 to +200 CThermal ResistanceJunction to CaseRth (j-c)175 C/WElectrical Characteristics (Ta = 25 C unless otherwise specified)

• NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector General Purpose Amplifier/Switches

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  Silicon, Epitaxial, Npn silicon

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