Transcription of BD135 - Plastic Medium-Power Silicon NPN Transistors
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BD135 - Plastic Medium-Power Silicon NPN Transistors
Semiconductor Components Industries, LLC, 2013 December, 2013 Rev. 171 Publication Order Number: BD135 /DBD135G, BD137G, BD139 GPlastic medium -PowerSilicon NPN TransistorsThis series of Plastic , medium power Silicon NPN Transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary High DC Current Gain BD 135, 137, 139 are complementary with BD 136, 138, 140 These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageBD135 GBD137 GBD139 GVCEO456080 VdcCollector Base VoltageBD135 GBD137 GBD139 GVCBO4560100 VdcEmitter Base Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to + 150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
BD135G, BD137G, BD139G http://onsemi.com 3 TYPICAL CHARACTERISTICS Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage
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