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Bipolar Junction Transistor (BJT)

Bipolar Junction Transistor (BJT). Lecture notes: Sec. 3. Sedra & Smith (6th Ed): Sec. *. Sedra & Smith (5th Ed): Sec. *. * Includes details of BJT device operation which is not covered in this course F. Najmabadi, ECE65, Winter 2012. A BJT consists of three regions NPN Transistor Simplified physical structure An implementation on an IC. Device construction is NOT symmetric Device is constructed such that o Thin base region (between E & C). BJT does NOT act as two o Heavily doped emitter diodes back to back (when o Large area collector voltages are applied to all three terminals). F. Najmabadi, ECE65, Winter 2012. BJT iv characteristics includes four parameters NPN Transistor Six circuit variables: (3 i and 3 v).

Active mode: 0 / / CE D v V C S C S v V B v V i I e e i I i BE T BE T ≥ = = β β BJT operation in the “active” mode F. Najmabadi, ECE65, Winter 2012 If the base is “thin” these electrons get

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  Transistor, Bipolar, Junction, Bipolar junction transistor

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