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Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) basics - gate Problems One Mark Questions 1. The break down voltage of a Transistor with its base open is BVCEO and that with emitter open is BVCBO, then (a) BVCEO = BVCBO (b) BVCEO > BVCBO (c) BVCEO < BVCBO (d) BVCEO is not related to BVCBO [ gate 1995] Soln. The given voltage ratings are reverse breakdown voltages. BVCEO Voltage between the collector and emitter with base open BVCBO Voltage from collector to base with emitter open The mechanism involved for such breakdown is due to Avalanche. The equation relating these breakdown is = ( ) This shows that voltage in open base configuration is smaller by ( ) Open emitterOpen baseBVCEO BVCBO VICBO ICEO IC Thus, BVCEO < BVCBO Option (c) 2.

Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO = BV CBO (b) BV CEO > BV CBO (c) BV CEO < BV CBO (d) BV CEO is not related to BV CBO [GATE 1995] Soln. The given voltage ratings are reverse ...

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