Transcription of BSS123 - N-Channel Logic Level Enhancement Mode Field ...
{{id}} {{{paragraph}}}
Example: bankruptcy
BSS123 - N-Channel Logic Level Enhancement Mode Field ...
DATA Semiconductor Components Industries, LLC, 2003 November, 2021 Rev. 101 Publication Order Number: BSS123 /DN-Channel Logic LevelEnhancement Mode FieldEffect TransistorBSS123 General DescriptionThese N Channel Enhancement mode Field effect transistors areproduced using onsemi s proprietary, high cell density, DMOS technology. These products have been designed to minimize on stateresistance while provide rugged, reliable, and fast switchingperformance. These products are particularly suited for low voltage,low current applications such as small servo motor control, powerMOSFET gate drivers, and other switching A, 100 V RDS(on) = 6 @ VGS = 10 V RDS(on) = 10 @ VGS = V High Density Cell Design for Extremely Low RDS
DATE 30 JAN 2018 SCALE 4:1 D A1 3 1 2 1 XXXM XXX = Specific Device Code M = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. GENERIC MARKING DIAGRAM* NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME ...
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: