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Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various Biasing circuits and their comparison with respect to stability BJT A Review Invented in 1948 by Bardeen, Brattain and Shockley Contains three adjoining, alternately doped semiconductor regions: Emitter (E), Base (B), and Collector (C) The middle region, base, is very thin Emitter is heavily doped compared to collector. So, emitter and collector are not interchangeable.

Two methods of analyzing a voltage divider bias circuit are: Exact method – can be applied to any voltage divider circuit Approximate method – direct method, saves time and energy, can be applied in most of the circuits. Exact method In this method, the Thevenin equivalent network for the network to the left of the base terminal

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