Transcription of Chapter 4. Basic Failure Modes and Mechanisms - NASA
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89 Chapter 4. Basic Failure Modes and MechanismsS. KayaliFailures of electronic devices, in general, can be catastrophic or failures render the device totally nonfunctional, while noncatastrophicfailures result in an electrically operating device that shows parametric degradation andlimited Chapter provides a description of some of the more common Failure modesand Mechanisms affecting GaAs-based MMICs. The current understanding of the topicwill be presented along with a discussion of some possible solutions, practiced processimprovements, and Failure ModesGaAs devices exhibit some general Failure Modes that can be attributed to adefined Failure mechanism. The most common Failure Modes are observed viadegradation of the MMIC parameters such as IDSS, gain, POUT, and others. Thedegradation observed in MMIC devices is normally a function of the material interactionsand the environmental conditions during test or operation. The importance of a particularparameter degradation depends greatly on the design and function of the MMIC and therelationship between the observed degradation and the general health of the device inquestion.
is intended as a Au- and Ga-diffusion barrier. Some other materials such as Cr, Ag, Pt, Ta, and Ti have been used as barrier materials with varying degrees of success. The activation energy associated with ohmic contact degradation varies between 0.5 eV and 1.8 eV [7,8]. This activation energy may provide reasonable contact life at low operating
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