Transcription of Chapter 9 Metal-Semiconductor Contacts
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Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-1 Chapter 9 Metal-Semiconductor Contacts : metal on lightly doped silicon rectifyingSchottky diodesmetal on heavily doped silicon low-resistanceohmic contactsSemiconductor Devices for Integrated Circuits (C. Hu)Slide Schottky BarriersEnergy Band Diagram of Schottky Contact B Bq Bnq BpEgq BnEcEcEfEfEvEvq BpSemiconductor Devices for Integrated Circuits (C. Hu)Slide 9-3 Schottky barrier heights for electrons and holes Bn Bn Bp m Bn Bp Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-4 Bn Increases with Increasing metal Work Functionq BnEcEvEfEq M Siq Bn=q M SiSemiconductor Devices for Integrated Circuits (C. Hu)Slide 9-5 Bn is typically to VEfEcQuestion Bpq BnEcEvEfEq M Si+ Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-6 Schottky barrier heights of metal silicide on Simetal-silicon contact Bn BpSemiconductor Devices for Integrated Circuits (C. Hu)Slide 9-7 Using CV Data to Determine BAWCqNVWNNkTqEEqqdepsdbisdepdcBnfcBnbi =+= = =Question: How should we plot the CV data to extract bi?
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-6 Schottky barrier heights of metal silicide on Si Silicide-Si interfaces are more stable than metal-silicon interfaces. After metal is deposited on Si, an annealing step is applied to form a silicide-Si contact. The term metal-silicon contact includes silicide-Si contacts.
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