Transcription of Chapter 9 Metal-Semiconductor Contacts
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Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-1 Chapter 9 Metal-Semiconductor Contacts :metal on lightly doped silicon rectifyingSchottky diodesmetal on heavily doped silicon low-resistanceohmic contactsSemiconductor Devices for Integrated Circuits (C. Hu)Slide Schottky BarriersEnergy Band Diagram of Schottky Contact B Bq Bnq BpEgq BnEcEcEfEfEvEvq BpSemiconductor Devices for Integrated Circuits (C. Hu)Slide 9-3 Schottky barrier heights for electrons and holes Bn Bn Bp m Bn Bp Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-4 Bn Increases with Increasing Metal Work Functionq BnEcEvEfEq M Siq Bn=q M SiSemiconductor Devices for Integrated Circuits (C. Hu)Slide 9-5 Bn is typically to VEfEcQuestion Bpq BnEcEvEfEq M Si+ Semiconductor Devices for Integrated Circuits (C. Hu)Slide 9-6 Schottky barrier heights of metal silicide on Simetal-silicon contact Bn BpSemiconductor Devices for Integrated Circuits (C.)
9.2 Thermionic Emission Theory / / 2 0 2 / / 3 2 ( )/ 3/2 2 ( )/,where 100 A/cm 4 2 1 3 / 2 / 2 2 q kT o qV kT n q kT qV kT S M thx th n thx n q V kT n q V kT c B B B B J e J e T e e h qm k J qnv v kT m v kT m e h m kT n N e
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