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CMOS Fabrication Process and MOSIS SCMOS Mask Layers

CSE 462: vlsi DesignJ. Brockman, University of Notre Dame 2000 cmos Fabrication ProcessandMOSIS SCMOS Mask LayersCSE 462: vlsi DesignJ. Brockman, University of Notre Dame 2000 cmos InverterCSE 462: vlsi DesignJ. Brockman, University of Notre Dame 2000P-Type Substrate and N-WellP-type substrateNMOS devicesgo hereN-wellPMOS devicesgo hereN-well maskCSE 462: vlsi DesignJ. Brockman, University of Notre Dame 2000 Active Areadepositednitride layeractive mask definesp-type and n-typemosfet locations(drain-gate-source)CSE 462: vlsi DesignJ. Brockman, University of Notre Dame 2000 Field Oxide Growthfield oxidegate oxide Thick field oxide electrically isolates transistors Nitride prevents field oxide growth Thin gate oxide grown after nitride removedo2o2o2o2o2o2o2o2o2o2 SiO2formation consumes Si Si-SiO2interface below original Si surfaceCSE 462: vlsi DesignJ.

CSE 462: VLSI Design J. Brockman, University of Notre Dame © 2000 CMOS Inverter

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  Process, Cmos, Fabrication, Vlsi, Miso, Scom, Cmos fabrication process and mosis scmos

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