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CMOS image sensor fabrication technologies Pixel design ...

LectureNotes5 CMOSI mageSensor DeviceandFabrication CMOS imagesensor fabricationtechnologies Pixeldesignandlayout Imagingperformanceenhancementtechniques Technologyscaling,industrytrends Microlens Color lterarrayEE392B:DeviceandFabrication5-1 ModernCMOSD eviceStructureEE392B:DeviceandFabricatio n5-2 ImagingIs Di erentfromDigitalLogicFeaturesDigitalLogi cImagingSilicideImprovescontactresistanc eAbsorbslight{ low photosensitivityIncreasedjunctionleakage STIE nablestighterdesignrulesLeadsto largerdark currentduetodefectsfromstressShallow junctionReducesshort-channele ectReducesquantume ciencyformediumto longwavelengthlightLower power supplyvoltageReducespower consumption,enablesdevicescalingReducesh eadroomfor signalswingLower thresholdvoltageImprovesdrivecurrentIncr easessubthresholdleakageThingateoxideEna blesdevicescalingtoshorterchannellengthI ncreasesgateleakageMultiplelevelsof interconnectImproveswire-abilityIncrease sdistancefrommicrolensorcolor lterto photodetectorEE392B.}

CMOS Image Sensor Device and Fabrication CMOS image sensor fabrication technologies Pixel design and layout Imaging performance enhancement techniques Technology scaling, industry trends Microlens Color lter array EE 392B: Device and Fabrication 5-1

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Trends in CMOS Image Sensor Technology and Design

isl.stanford.edu

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