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CMOS image sensor fabrication technologies Pixel design ...

LectureNotes5 CMOSI mageSensor DeviceandFabrication CMOS imagesensor fabricationtechnologies Pixeldesignandlayout Imagingperformanceenhancementtechniques Technologyscaling,industrytrends Microlens Color lterarrayEE392B:DeviceandFabrication5-1 ModernCMOSD eviceStructureEE392B:DeviceandFabricatio n5-2 ImagingIs Di erentfromDigitalLogicFeaturesDigitalLogi cImagingSilicideImprovescontactresistanc eAbsorbslight{ low photosensitivityIncreasedjunctionleakage STIE nablestighterdesignrulesLeadsto largerdark currentduetodefectsfromstressShallow junctionReducesshort-channele ectReducesquantume ciencyformediumto longwavelengthlightLower power supplyvoltageReducespower consumption,enablesdevicescalingReducesh eadroomfor signalswingLower thresholdvoltageImprovesdrivecurrentIncr easessubthresholdleakageThingateoxideEna blesdevicescalingtoshorterchannellengthI ncreasesgateleakageMultiplelevelsof interconnectImproveswire-abilityIncrease sdistancefrommicrolensorcolor lterto photodetectorEE392B.}

Index of refraction > 1.59 Can be applied below 500C No degradation or aging Semiconductor processing com-patible Canbepatternedwithfeaturesize commensurate with the pixel size Lens materials are typically i-line or DUV resists Basematerialsareacrylic-basedresists, polyimide resists, epoxy resists, poly-organosiloxane, polyorganosilicate

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