Transcription of Complementary Silicon Plastic Power ... - ON Semiconductor
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Semiconductor Components Industries, LLC, 2014 December, 2014 Rev. 61 Publication Order Number:MJE15032/DMJE15032 (NPN),MJE15033 (PNP) Complementary SiliconPlastic Power TransistorsDesigned for use as high frequency drivers in audio High DC Current Gain High Current Gain Bandwidth Product TO 220 Compact Package Epoxy Meets UL 94 V 0 @ in These devices are Pb Free and are RoHS Compliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO250 VdcCollector Base VoltageVCB250 VdcEmitter Base Current Current PeakICM16 AdcBase Power Dissipation@ TC = 25_CDerate above Power Dissipation@ TA = 25_CDerate above and Storage JunctionTemperature RangeTJ, Tstg 65 to + 150_CESD Human Body ModelHBM3 BVESD Machine ModelMMCVS tresses exceeding those listed in the Maximum Ratings table may damage thedevice.
Total Power Dissipation @ TA = 25 C Derate above 25 C PD 2.0 0.016 W W/ C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device ...
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