Transcription of EE105 – Fall 2014 Microelectronic Devices and Circuits
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1 1 Lecture12-Small signal Model-BJT EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) 2 Lecture12-Small signal Model-BJT Introduction to Amplifiers Amplifiers: transistors biased in the flat-part of the i-v curves BJT: forward-active region MOSFET: saturation region In these regions, transistors can provide high voltage, current and power gains Bias is provided to stabilize the operating point (the Q-Point) in the desired region of operation Q-point also determines Small- signal parameters of transistor Voltage gain, input resistance, output resistance Maximum input and output signal amplitudes Power consumption 2 3 Lecture12-Small signal Model-BJT Transistor Amplifiers BJT Amplifier Concept The BJT is biased in the active region by dc voltage source VBE.
A typical design point is I C R C = V C 3 ... The input is near our small-signal limit for linear operation. Lecture12-Small Signal Model-BJT 22 Common-Emitter Amplifiers Dual Supply Operation - Example
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