Transcription of EE105 – Fall 2014 Microelectronic Devices and Circuits
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EE105 – Fall 2014 Microelectronic Devices and Circuits
1 1 Lecture13-Small Signal Model-MOSFET EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) 2 Lecture13-Small Signal Model-MOSFET Small-Signal Operation MOSFET Small-Signal Model - Summary Since gate is insulated from channel by gate-oxide input resistance of transistor is infinite. Small-signal parameters are controlled by the Q-point. For the same operating point, MOSFET has lower transconductance and an output resistance that is similar to the BJT. Transconductance: gm=2 IDVGS VTN=2 KnIDOutput resistance: ro=1go=1+ VDS ID 1 IDAmplification factor for lVDS<<1: f=gmro=1+ VDS ID 1 2 KnIDIG=0ID=Kn2 VGS VTN()21+ VDS()2 3 Lecture13-Small Signal Model-MOSFET MOSFET Small-Signal Operation Body Effect in Four-terminal MOSFETs gmb= iD vBSQ-point= iD vSBQ-pointgmb= iD VTN#$%%%&'((( VTN vSB#$%%%&'(((Q-point= ( gm )=gm Drain current depends on threshold voltage which in turn depends on vSB.))))))
Drain current depends on threshold voltage which in turn depends on v SB. Back-gate transconductance is: 0 < η < 3 is called the back-gate transconductance parameter. bulk terminal is a reverse-biased diode. Hence, no conductance from the bulk terminal to other terminals. Lecture13-Small Signal Model-MOSFET 4 MOSFET Small-Signal Operation
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